unisonic technologies co., ltd 5N25 preliminar y power m o sfet www.unisonic.com.tw 1 of 6 copyright ? 2014 unisonic technologies co., ltd qw-r502-852.b 3.8a, 250v logic n-channel mosfet ? descripti on t he u t c 5N25 is an n-cha nnel e n h ance m ent mosf et , it uses ut c?s advanc ed tech no log y to provi de c u stomers w i th a minim u m on-state resist ance, hi gh s w it ching s pee d a nd lo w gate ch arge. it ca n also w i thsta n d high en erg y p u lse in the av alanc he a nd c o mmutatio n modes. t he u t c 5n2 5 is su itabl e f o r hi gh effici e n c y s w i t chi ng dc/dc converter, mot o r control a nd s w itc h mod e p o w e r su ppl y. ? features * r ds (on) <1 .2 ? @v gs = 10v * lo w g a te cha r ge ( t y p= 14 n c ) * lo w c r ss ( t y p= 6.0pf ) * high s w itc h in g spee d ? sy mbol ? or de r i ng i n form at i o n ordering n u m ber package pi n assi gn me nt packing lead free halogen free 1 2 3 5N25l-tn3-t 5N25g-tn3-t to-252 g d s tube 5N25l-tn3-r 5N25g-tn3-r to-252 g d s tape reel note: pin assignment: g: gate d: drain s: source ? mar k ing i n formati o n http://
5N25 preliminar y power m o sfet unisonic technologi es co., ltd 2 of 6 w w w . uniso nic.co m.t w q w - r 50 2- 852 .b ? absolute maxi mu m ra ting s (t c = 25c, unle ss other w i s e n o ted) paramet er symbol rat i ngs unit drain-s ource voltag e v ds s 250 v gate-source voltage v gss 20 v drain current contin uo us i d 3.8 a pulse d (note 2 ) i dm 9 a avala n che c u r r ent (note 2) i ar 3.8 a avalanche energy singl e puls ed ( note 3) e as 85 mj repetitiv e (not e 2) e ar 3.7 mj peak di ode r e cover y dv/dt (n ote 4) dv/dt 5.5 v/ns power dissipation t a = 25c p d 2.5 w t c = 25c 37 w derate a bove 25c 0.29 w/c junctio n t e mperature t j -55~ +150 c storage t e mperature r ang e t st g -55~ +150 c notes: 1. absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. 2. repetitiv e rati ng: pulse w i dth lim ited b y ma ximum juncti on t e mperat ure. 3. l= 6.2mh, i as = 3 .8a, v dd = 50v , r g =25 ? , starting t j = 25c. 4. i sd 4.5a, di/dt 300a/s, v dd bv ds s , starting t j = 25c. ? th er mal char ac teri stic s paramet er symbol rat i ngs unit junctio n to am bient (n ote) ja 50 c/w junctio n to ambient 110 c/w junctio n to case jc 3.4 c/w note: w hen mou n ted on the minim u m pad size rec o mmend ed (p cb mount)
5N25 preliminar y power m o sfet unisonic technologi es co., ltd 3 of 6 w w w . uniso nic.co m.t w q w - r 50 2- 852 .b ? electric al ch ara cteri s tic s (t c = 25c, unless oth e r w is e noted) parameter symbol test conditions min typ max unit off characteristics drain-s ource breakd o w n vo l t age bv ds s i d = 250a, v gs = 0 v 250 v breakd o w n vo l t age t e mperature coefficient bv ds s /t j reference to 25c, i d =250a 0.18 v/c drain-s ource l eaka ge curr en t i ds s v ds = 250v, v gs = 0 v 1 a gate-source l eaka ge curr en t fo rw ard i gss v gs = + 20v, v ds = 0 v + 100 na reverse v gs = - 20v, v ds = 0 v -100 na on characteristics gate threshold voltage v gs ( th ) v ds =v gs , i d = 250a 2 4 v static drain-s o urce on-state resistanc e (note 1) r ds (on) v gs = 10v, i d = 1 .9a 0.74 1.2 ? v gs =5v, i d =1.9a 0.92 1.25 ? forward transconductance g fs v ds =30v, i d =1.9a 3.35 s dynamic parameters input cap a cita nce c iss v gs =0v, v ds =25v, f=1.0mhz 250 325 pf output capac itance c oss 40 50 pf reverse transfer capacitance c rss 6 8 pf switching parameters t o tal gate charge q g v gs =5 v, v ds = 160v, i d =4 .5 a (note 1, 2) 14 20 nc gate to source charge q gs 1.2 nc gate to drain charge q gd 2.4 nc turn-on delay time t d ( on ) v dd = 100v, i d =4.5a, r g =2 5 ? (note 1, 2) 28 40 ns rise t i me t r 24 80 ns turn-off delay time t d ( off ) 80 110 ns fall-time t f 20 90 ns source- drain diode ratings and characteristics maximum bod y -d iod e conti n uous c u rrent i s 3.8 a maximum body -diode puls ed current i sm 9 a drain-s ource diod e f o r w ard voltage v sd i s =3.8a, v gs =0 v 1 . 5 v bod y di ode r e verse rec o ver y t i me t rr i s =4.5a, v gs =0 v, d i f /dt= 100a/s (note 1) 95 ns bod y di ode r e verse rec o ver y ch arg e q rr 0.3 c notes: 1. pulse test: pulse width 300s, duty cycle 2% 2. essentia ll y in d epe nde nt of op eratin g temper ature
5N25 preliminar y power m o sfet unisonic technologi es co., ltd 4 of 6 w w w . uniso nic.co m.t w q w - r 50 2- 852 .b ? test circ uits and wav e for m s 50k ? 300nf dut v ds 5v 12v cha r ge q gs q gd q g gate charge test circuit gate charge waveforms v gs v gs 200nf same type as du t 3ma
5N25 preliminar y power m o sfet unisonic technologi es co., ltd 5 of 6 w w w . uniso nic.co m.t w q w - r 50 2- 852 .b ? t est circuits and wave form s(cont. ) v ds + - du t r g dv/dt con t ro lle d by r g i sd con t ro lle d by pu lse pe riod v dd same type as dut i sd v gs l driver v gs (driver) i sd (dut) v ds (dut) d= ga te pulse w i d t h gate pulse period 10 v di/d t body di od e re verse cu rren t i rm bo dy di ode reco very dv/dt v dd v sd bod y di od e fo rwa r d voltag e dro p i fm , bo dy dio de f o rw ard cu rren t pe ak dio de r e co very dv/dt te st ci rcuit an d wa veforms
5N25 preliminar y power m o sfet unisonic technologi es co., ltd 6 of 6 w w w . uniso nic.co m.t w q w - r 50 2- 852 .b u t c as s u m e s no r e s pon s i bility f o r equipm e n t f a il u r es th at r e s u lt f r om us ing pr oducts a t v a lue s that ex ceed, ev e n m o m entar ily , r a ted v a lues ( s uch a s m a x i m u m r a tings , oper ating condition r anges , or othe r par am eter s ) lis t ed in pr oducts s pecif ications of any and all u t c pr odu c t s des cr ibed or contained her ein. u t c pr oducts ar e not des igned f o r us e in lif e s upp or t appliances , dev i c es or s y s t e m s w her e m a l f unction of thes e pr o ducts can be r eas onably ex p ected to r es ult in per s onal injur y . r epr oduction in whole or in p a r t is p r ohibited w i thout the pr ior w r it t en cons ent of the copyr i ght ow n er . t he inf o r m ation pr es e n ted in this docum ent does not f o r m par t of any quotation or contr a ct, is believ e d to be accur a te and r e liable and m a y be changed w i thout notice.
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